Giant photoinduced effects in films from the Ge2S 3-AsS3 system

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 10, 2007, Pages 3115-3118

  Arsova, D ^a   Beeva, K ^b   Vateva, E ^a   Pamukchieva, V ^a   Beev, K ^b   Sainov, S ^b  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b CENTRAL LABORATORY OF OPTICAL STORAGE AND PROCESSING OF INFORMATION   (Bulgaria)

Author keywords

Chalcogenide thin films; Optical properties; Photoinduced changes

Indexed keywords

ARSENIC COMPOUNDS; ENERGY GAP; GERMANIUM COMPOUNDS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOBLEACHING; THIN FILMS;

ANNEALING TEMPERATURES; CHALCOGENIDE THIN FILMS; PHOTOEXPANSION; PHOTOINDUCED CHANGE; PHOTOINDUCED EFFECTS; THERMOINDUCED CHANGES;

SULFUR COMPOUNDS;

EID: 38549118566     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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