Pressure dependent rapid thermal processing of CuInS2 thin films investigated by in-situ energy dispersive X-ray diffraction

Materials Research Society Symposium Proceedings

Volumn 1012, Issue , 2007, Pages 503-508

  Kötschau, Immo Michael ^a   Rodriguez Alvarez, Humberto ^a   Streeck, Cornelia ^a   Weber, Alfons ^a   Klaus, Manuela ^a   Denks, Ingwer Asmus ^a   Gibmeier, Jens ^a   Genzel, Christoph ^a   Schock, Hans Werner ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; COPPER COMPOUNDS; HEATING RATE; PARAMETER ESTIMATION; PHYSICAL VAPOR DEPOSITION; RAPID THERMAL PROCESSING; X RAY DIFFRACTION; CRYSTALLINE MATERIALS; PARTIAL PRESSURE; RAPID THERMAL ANNEALING; SULFUR; THIN FILMS;

CRYSTALLINE PHASES; ENERGY DISPERSIVE X-RAY DIFFRACTION; GRAPHITE REACTORS; TOP TEMPERATURE; CRYSTALLINE PHASIS; ENERGY DISPERSIVE X-RAY DIFFRACTIONS; PHYSICAL VAPOUR DEPOSITION; PRESSURE CONDITIONS; PRESSURE DEPENDENT; PROCESSING WINDOWS; REACTION CHAMBERS; REACTION PATHWAYS;

THIN FILMS; EXPERIMENTS;

EID: 38549118357     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1012-y13-09     Document Type: Conference Paper

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