Raman spectroscopic studies of ZnSe/GaAs interfaces

Journal of Raman Spectroscopy

Volumn 39, Issue 1, 2008, Pages 91-94

  El Brolossy, T A ^a   Talaat, H ^a  

^a Ain Shams University   (Egypt)

Author keywords

Micro Raman spectroscopy; Photoinduced plasma; Semiconductor interfaces

Indexed keywords

CARRIER CONCENTRATION; ELECTRON GAS; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LASER BEAMS; RAMAN SPECTROSCOPY; SELENIUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS; SPECTROSCOPIC ANALYSIS; WIDE BAND GAP SEMICONDUCTORS;

COUPLED MODE; DIFFERENT THICKNESS; FOCUSED LASER BEAMS; MICRO RAMAN SPECTROSCOPY; MICRO-RAMAN SPECTRUM; NONRESONANT; PHOTOINDUCED PLASMA; RAMAN SPECTROSCOPIC STUDY; SEMI-INSULATING GAAS; SEMICONDUCTOR INTERFACES;

GALLIUM ARSENIDE;

EID: 38549090262     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.1821     Document Type: Article

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