Dielectric relaxations in the Ce1-xYbxO 2-δ system

Japanese Journal of Applied Physics

Volumn 47, Issue 1, 2008, Pages 212-216

  Yamamura, Hiroshi ^a   Satake, Jun ^a   Saito, Miwa ^a   Kakinuma, Katsuyoshi ^a  

^a KANAGAWA UNIVERSITY   (Japan)

Author keywords

Debye type polarization; Dielectric relaxation; Dopant vacancy associate; Fluorite type structure; Oxide ion conductor

Indexed keywords

DIELECTRIC LOSSES; DIELECTRIC RELAXATION; NUMERICAL ANALYSIS; PERMITTIVITY; SEMICONDUCTOR DOPING; YTTERBIUM COMPOUNDS;

DEBYE-TYPE POLARIZATION; DOPANT-VACANCY; FLUORITE-TYPE STRUCTURE; OXIDE-ION CONDUCTOR;

CERIUM COMPOUNDS;

EID: 38549085678     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.212     Document Type: Article

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