Ab initio study of clean and hydrogen-saturated unreconstructed SiC{0001} surfaces

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 493-496

  Mattausch, A ^a   Dannecker, T ^a   Pankratov, O ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

H passivated surfaces; Mott Hubbard insulator; Unreconstructed surfaces

Indexed keywords

CALCULATIONS; DANGLING BONDS; HYDROGEN; MOTT INSULATORS; SILICON CARBIDE; WIDE BAND GAP SEMICONDUCTORS;

AB INITIO STUDY; ANTIBONDING; CLEAN SURFACES; HUBBARD; MOTT-HUBBARD INSULATOR; PASSIVATED SURFACE; STRONG CORRELATION;

DENSITY FUNCTIONAL THEORY;

EID: 38449090306     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.493     Document Type: Conference Paper

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