Improved efficiency in power factor correction circuits with a pn-gated SiC FET

Materials Science Forum

Volumn 556-557, Issue , 2007, Pages 995-998

  Kelley, Robin ^a   Mazzola, Michael S ^a   Draper, William L ^a  

^a SemiSouth Laboratories Inc   (United States)

Author keywords

JFET; Normally off power switch

Indexed keywords

DC-DC CONVERTERS; EFFICIENCY; ELECTRIC POWER FACTOR CORRECTION; JUNCTION GATE FIELD EFFECT TRANSISTORS; POWER FIELD EFFECT TRANSISTORS; RECTIFYING CIRCUITS; SCHOTTKY BARRIER DIODES; TIMING CIRCUITS;

AC-DC CONVERTERS; ACTIVE POWER FACTOR CORRECTIONS; CONTINUOUS CONDUCTION MODE; FREEWHEELING DIODES; OPERATING FREQUENCY; POWER FACTOR CORRECTION CIRCUITS; POWER SWITCHES; VERTICAL JUNCTION FIELD EFFECT TRANSISTORS;

SILICON CARBIDE;

EID: 38449088781     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.556-557.995     Document Type: Conference Paper

References (4)

1. R. Rupp and I. Zverev: “SiC Power Devices: How to be Competitive Towards Si-Based Solutions?,” Mat. Sci. Forum, Vols. 433-436 (2003), p. 805.
2. th IEEE Applied Power Elect. Conf. (2003).
3. th IEEE Applied Power Elect. Conf. (2005), p. 11.
4. th IEEE Applied Power Elect. Conf. (2006), p. 460.