Heterojunction diodes in 3C-SiC/Si system grown by reactive magnetron sputtering: Effects of growth temperature on diode rectification and breakdown

Journal of Electronic Materials

Volumn 25, Issue 9, 1996, Pages 1495-1500

  Wahab, Q ^a   Karlsteen, M ^a   Nur, O ^a   Hultman, L ^a   Willander, M ^a   Sundgren, J E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Heterojunction diodes; Magnetron sputtering; Silicon carbide; Wide bandgap semiconductors

Indexed keywords

EID: 3843124068     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655389     Document Type: Article

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