Photoluminescence and Raman scattering characterization of silicon-doped In0.52Al0.48As grown on InP (100) substrates by molecular beam epitaxy

Journal of Electronic Materials

Volumn 25, Issue 9, 1996, Pages 1458-1462

  Yoon, S F ^a   Miao, Y B ^a   Radhakrishnan, K ^a   Swaminathan, S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

InAlAs; Molecular beam epitaxy (MBE); Photoluminescence; Raman scattering

Indexed keywords

EID: 3843119699     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02655383     Document Type: Article

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