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Volumn 70, Issue 6, 1997, Pages 691-693

Monolithic p-i-n GaAlAs multiple quantum well photorefractive device

Author keywords

[No Author keywords available]

Indexed keywords


EID: 3843112550     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118241     Document Type: Article
Times cited : (9)

References (9)
  • 4
    • 85033307557 scopus 로고    scopus 로고
    • OSA, Topical Meeting on Photorefractive Materials, Effects and Devices, June 1995 (unpublished)
    • P. Tayebati. K. Krishnaswami, D. D. Nolte, and M. R. Melloch, Technical Digest, OSA, Topical Meeting on Photorefractive Materials, Effects and Devices, June 1995 (unpublished), p. 536.
    • Technical Digest , pp. 536
    • Tayebati, P.1    Krishnaswami, K.2    Nolte, D.D.3    Melloch, M.R.4
  • 7
    • 0000622920 scopus 로고
    • A. M. Fox, D. A. B. Miller, J. E. Cunningham, and W. Y. Jan, IEEE J. Quantum Electron. 27, 2281 (1991); K. W. Goossen et al., Appl. Phys. Lett. 57, 2582 (1990).
    • (1990) Appl. Phys. Lett. , vol.57 , pp. 2582
    • Goossen, K.W.1
  • 8
    • 85033321448 scopus 로고    scopus 로고
    • note
    • "Input diffraction efficiency" is defined as the peak power in the first order diffracted beam divided by the input power of the corresponding beam and the "output diffraction efficiency" is defined as the peak power in the first order diffracted beam divided by the output power of the writing beam.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.