Strong improvement of critical parameters of CaF2 lens blanks for 193nm and 157nm lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5377, Issue PART 3, 2004, Pages 1781-1786

  Grabosch, Guenter ^a   Parthier, Lutz ^a   Kruell, Peter ^a   Knapp, Konrad ^a  

^a Schott Lithotec AG   (Germany)

Author keywords

157 nm; 193 nm; CaF2; Homogeneity of refractive index

Indexed keywords

ANNEALING; CALCIUM COMPOUNDS; CRYSTAL GROWTH; CRYSTAL LATTICES; GRAIN BOUNDARIES; IMAGE QUALITY; OPTICS; OPTIMIZATION; PARAMETER ESTIMATION; REFRACTIVE INDEX;

CAF2; DEFECT STRUCTURES; MOORES LAW; SLIP PLANE SYSTEMS;

LENSES;

EID: 3843091536     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.536310     Document Type: Conference Paper

References (4)

1. nd International Sematech 157nm Technical Data Review Meeting, May 2002
2. rd International Sematech 157nm Technical Data Review Meeting, Sep. 2002
3. th International Symposium on 157nm Lithography, Aug. 2003
4. L. A. Shuvalov ed.: "Modern Crystallography IV" Springer Series in Solid State Sciences 37, pp 77