Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS

Journal of Electronic Materials

Volumn 27, Issue 5, 1998, Pages 479-483

  Docter, D P ^a   Ibbetson, J P ^b   Gao, Y ^c   Mishra, U K ^b   Liu, T ^a   Grider, D E ^a  

^a Hughes Aircraft Co   (United States)

^b University of California   (United States)

^c CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

Depth profiling; GaAs; InP; Low temperature growth; Secondary ion mass spectrometry (SIMS); Stoichiometry

Indexed keywords

EID: 3843083863     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0180-6     Document Type: Article

References (22)

1. F.W. Smith, A.R. Calawa, C.-L. Chen, M.J. Manfra and L.J. Mahoney, IEEE Electron Dev. Lett. 9 (2), 77 (1988).
2. L.-W. Yin, Y. Hwang, J.H. Lee, R.M. Kolbas, R.J. Trew and U.K. Mishra, IEEE Electron Dev. Lett. 11 (12), 561 (1990).
3. A.C. Warren, N. Katzenellenbogen, D. Grixchkowsky, J.M. Woodall, M. R. Melloch and N. Otsuka, Appl. Phys. Lett. 58 (14), 1512 (1991).
4. K.A. McIntosh, K.B. Nichols, S. Verghese and E.R. Brown, Appl. Phys. Lett. 70 (3), 354 (1997).
5. D.E. Grider, S.E. Swirhun, D.H. Narum, A.I. Akinwande, T.E. Nohava, W.R. Stuart, P. Joslyn and K.C. Hsieh, J. Vac. Sci. Technol. B 8, 301 (1990).
6. M.R. Melloch, N. Otsuka, J.M. Woodall, A.C. Warren and J.L. Freeouf, Appl. Phys. Lett. 57 (15), 1531 (1990).
7. M.R. Melloch, J.M. Woodall, E.S. Harmaon, N. Otsuka, F.H. Pollak, D.D. Nolte, R.M. Feenstra and M A. Lutz, Annual Rev. of Mater. Sci, 25, 547 (1995).
8. T.M. Cheng, C.Y. Chang, A. Chin, M.F. Huang and J.H. Huang, Appl. Phys. Lett. 64 (19), 2517, 2519 (1994).
9. R.A. Kiehl, M. Saito, M. Yamaguchi, O. Ueda and N. Yokoyama, Appl. Phys. Lett. 66 (17), 2194 (1995).
10. M O. Manasreh, D.C. Look, K.R. Evans and C.E. Stutz, Phys. Rev. B 41(14), 10272 (1990).
11. S. O'Hagan and M. Missous, J. Appl. Phys. 75 (12), 7835 (1994).
12. X. Liu, A. Prasad, J. Nishio, E.R. Weber, Z. Lilienthal-Weber and W. Walukiewicz, Appl. Phys. Lett. 67 (2), 279 (1995).
13. R.M. Feenstra, J.M. Woodall and G.D. Pettit, Phys. Rev. Lett. 71, 1176 (1993).
14. K.M. Yu, M. Kaminska and Z. Liliental-Weber, J. Appl. Phys. 72 (7), 2850 (1992).
15. Z. Liliental-Weber, G. Cooper, R. Mariella Jr. and C. Kocot, J. Vac. Sci. Technol. B 9 (4), 2323 (1991).
16. K. Mahalingam, N. Otsuka, M.R. Melloch, J.M. Woodall and A C. Warren, J. Vac. Sci. Technol. B 9 (4), 2328 (1991).
17. M.R. Melloch, N. Otsuka, K. Mahalingam, C.L. Chang, J M. Woodall, G.D. Pettit, P.D. Kirchner, F. Cardone, A.C. Warren and D.D. Nolte, J. Appl. Phys. 72 (8), 3509 (1992).
18. See, for example, K. Wittmaack, Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), B64 (1-4), 621 (1992).
19. Y. Gao, J. Appl. Phys. 64 (7), 3760 (1988).
20. P. Thompson, Y. Li, J.J. Zhou, D.L. Sato, L. Flanders and H.P. Lee, Appl. Phys. Lett. 70 (12), 1605 (1997).
21. T.P. Pearsall, S.R. Saban, J. Booth, B. Beard, Jr. and S.R. Johnson, Rev. of Sci. Instr. 66 (1995).
22. A. Claverie, J. Crestou and J.C. Garcia, Appl. Phys. Lett. 62 (14), 1638 (1993).