Application of photosensitive BARC and KrF resist on implant layers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 452-460

  Owe Yang, D C ^a   Ho, Bang Chein ^a   Miyazaki, Shinji ^b   Katayama, Tomohide ^b   Susukida, Kenji ^b   Kang, Wenbing ^b   Chang, Yung Cheng ^c  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^b SÜD CHEMIE AG   (Germany)

^c Clariant Taiwan Co Ltd   (Taiwan)

Author keywords

CD variation; Developer soluble BARC; Implant layers; KrF lithography; Photosensitive BARC

Indexed keywords

ACIDITY; ANISOTROPY; ETCHING; ION IMPLANTATION; PHOTORESISTS; PHOTOSENSITIVITY; SILICON WAFERS; SOLVENTS;

CD VARIATION; DEVELOPER SOLUBLE BARC; IMPLANT LAYERS; KRF LITHOGRAPHY; PHOTOSENSITIVE BARC;

ANTIREFLECTION COATINGS;

EID: 3843073024     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534735     Document Type: Conference Paper

References (2)

1. Brewer, T.; Carlson, R.; Arnold, J; Journal of Applied Photographic Engineering, 1981,7,184
2. Guerrero, D; Trudgeon, T; SPIE 2003, v.5039