Resist interaction in 193-/157-nm immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5376, Issue PART 1, 2004, Pages 44-55

  Kishimura, Shinji ^a,b   Endo, Masayuki ^a   Sasago, Masaru ^a  

^a PANASONIC CORPORATION   (Japan)

^b NONE   (Japan)

Author keywords

157 nm; 193 nm; Acetal; COMA; Hydrolysis; Immersion; PAG; PFPE; Resist; Water

Indexed keywords

CARBOXYLIC ACIDS; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROLYSIS; PHOTORESISTORS; POLYETHERS; REFRACTIVE INDEX; SOLUTIONS;

157-NM; 193-NM; ACETAL; COMA; IMMERSION LITHOGRAPHY; PERFLUOROPOLYETHERS (PFPE); PHOTOCHEMICAL ACID GENERATOR (PAG);

PHOTOLITHOGRAPHY;

EID: 3843056736     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534759     Document Type: Conference Paper

References (18)

1. B. J. Lin, "The future of subhalf-micrometer optical lithography", Microelectronic Engineering 6, pp.31, 1987.
2. H. Kawata, I. Matsumura, H. Yoshida and K. Murata, "Fabrication of 0.2 μm fine patterns using optical projection lithography with an oil immersion lens", Jpn. J. Appl. Phys. 31, pp.4174, 1992.
3. a) M. Switkes and M. Rothschild, "Immersion lithography at 157 nm", Proc. SPIE 4691, pp. 459, 2002;
4. b) M. Switkes and M. Rothschild, "Resolution enhancement of 157 nm lithography by liquid immersion", Proc. SPIE 4691, pp. 459, 2002.
5. http://public.itrs.net
6. M. Switkes, R. R. Kunz, R. F. Sinta, M. Rothschild, P. M. Gallagher-Wetmore, V. J. Krukonis, and K. Williams, "Immersion liquids for lithography in the deep ultraviolet", Proc. SPIE 5040, pp. 690, 2003.
7. S. Kishimura, M. Endo, and M. Sasago, "New 157-nm resist platform based on etching model for fluoropolymers", Proc. SPIE4690, pp. 200, 2002.
8. 2-excimer laser photochemical processes", Proc. SPIE 3999, pp. 395, 2000.
9. A. Sekiguchi, C. A. Mack, Y. Minami, T. Matsuzawa, "Resist metrology for lithography simulation, part 2: development parameter measurements", Proc. SPIE 2725, pp. 49, 1996.
10. W. D. Hinsberg, S. Lee, H. Ito, D. E. Horne, and K. K. Kanazawa, " Experimental approaches for assessing interfacial behavior of polymer films during dissolution in aqueous base", Proc. SPIE 4345, pp. 1, 2001.
11. M. Toriumi, T. Itani, J. Yamashita, T. Sekine, K. Nakatani, "Dissolution characteristics of resist polymers studied by quartz crystal microbalance transmission-line analysis and pKa acidity analysis", Proc. SPIE 4690, pp. 904, 2002.
12. H. Ito, W. D. Hinsberg, L. F. Rhodes, and C. Chang, "Hydrogen bonding and aqueous base dissolution behavior of hexafluoroisopropanol-bearing polymers", Proc. SPIE 5039, pp. 70, 2003.
13. C. Mertesdorf, N. Muenzel, H. E. Holzwarth, P. A. Falcigno, H-T.s Schacht, O. Rohde, R. Schulz, S. G. Slater, D. Frey, O. Nalamasu, A. G. Timko, T. X. Neenan, "Structural design of ketal and acetal blocking groups in two-component chemically amplified positive DUV resists", Proc. SPIE 2438, pp. 84, 1995.
14. S. J. Choi, Y. Kang, D. W. Jung, C. G. Park, and J. T. Moon, "Novel single-layer Chemically Amplified resist for 193-nm lithography", Proc. SPIE 3049, pp. 104, 1997.
15. S. J. Choi, H. W. Kim, S. G. Woo, and J. T. Moon, "Design and synthesis of new photoresist materials for ArF lithography", Proc. SPIE 3999, pp. 54, 2000.
16. T. Ohfuji, K. Maeda, K. Nakano, and E. Hasegawa, Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography", Proc. SPIE 2724, pp. 386, 1996.
17. A. Sekiguchi, M. Kadoi, Y. Miyake, and T. Matsuzawa, "Development of system for photochemical analysis of F2-excimer laser process", Jpn. J. Appl. Phys. 39, pp. 1920, 2000.
18. M. Padmanaban, R. R. Dammel, S. H. Lee, W. K. Kim, T. Kudo, D. S. McKenzie, D. Rahman, "Performance of imide and methide onium PAGs in 193-nm resist formulations", Proc. SPIE 5039, pp. 743, 2003.