Lithography of choice for the 45 nm node: New medium, new wavelength or new beam?

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5377, Issue PART 1, 2004, Pages 34-45

  Uesawa, Fumikatsu ^a   Katsumata, Mikio ^a   Ogawa, Kazuhisa ^a   Takeuchi, Koichi ^a   Omori, Shinji ^a   Yoshizawa, Masaki ^a   Kawahira, Hiroichi ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Aberration; ACLV; ArF; Electron beam; Immersion; Mask; MEF; NGL; Phase shift

Indexed keywords

ABERRATIONS; AERIAL PHOTOGRAPHY; ATTENUATION; COMPUTER SIMULATION; FABRICATION; IMAGING TECHNIQUES; PHASE SHIFT; PHOTOLITHOGRAPHY;

ACLV; ARF; IMMERSION; MEF; NGL;

ELECTRON BEAM LITHOGRAPHY;

EID: 3843052307     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.535104     Document Type: Conference Paper

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