High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

Applied Physics Letters

Volumn 92, Issue 2, 2008, Pages

  Wang, Wangping ^a   Hou, Ying ^a   Xiong, Dayuan ^a   Li, Ning ^a   Lu, Wei ^a   Wang, Wenxing ^b   Chen, Hong ^b   Zhou, Junming ^b   Wu, E ^c   Zeng, Heping ^c  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b INSTITUTE OF PHYSICS   (China)

^c EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCURRENTS; PHOTOEXCITATION; RESONANT TUNNELING;

PHOTOEXCITED CARRIER; PHOTON DETECTION; RESONANT TUNNELING DIODES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 38349147971     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2832368     Document Type: Article

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