메뉴 건너뛰기




Volumn 92, Issue 1, 2008, Pages

Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTANCE; ELECTRODEPOSITION; ELECTROLYTES; HETEROJUNCTIONS; OXIDES; SCHOTTKY BARRIER DIODES; SUBSTRATES; VOLTAMMETRY; ZINC;

EID: 38049071425     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2828702     Document Type: Article
Times cited : (24)

References (22)
  • 3
    • 0038609631 scopus 로고    scopus 로고
    • PRLTAO 0031-9007 10.1103/PhysRevLett.90.197402.
    • N. H. Nickel and K. Fleischer, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.90.197402 90, 197402 (2003).
    • (2003) Phys. Rev. Lett. , vol.90 , pp. 197402
    • Nickel, N.H.1    Fleischer, K.2
  • 4
    • 34547696858 scopus 로고    scopus 로고
    • THSFAP 0040-6090 10.1016/j.tsf.2007.03.185.
    • T. Ren, H. R. Baker, and K. M. Poduska, Thin Solid Films THSFAP 0040-6090 10.1016/j.tsf.2007.03.185 515, 7976 (2007).
    • (2007) Thin Solid Films , vol.515 , pp. 7976
    • Ren, T.1    Baker, H.R.2    Poduska, K.M.3
  • 14
    • 0033722817 scopus 로고    scopus 로고
    • JAELBJ 0021-891X 10.1023/A:1003857026200.
    • B. Canava and D. Lincot, J. Appl. Electrochem. JAELBJ 0021-891X 10.1023/A:1003857026200 30, 711 (2000).
    • (2000) J. Appl. Electrochem. , vol.30 , pp. 711
    • Canava, B.1    Lincot, D.2
  • 15
    • 38049072834 scopus 로고
    • LATCON: Program for the LS-Refinement of Lattice Constants (Uni Lausanne, Lausanne, Switzerland).
    • D. Schwarzenbach, LATCON: Program for the LS-Refinement of Lattice Constants (Uni Lausanne, Lausanne, Switzerland, 1975).
    • (1975)
    • Schwarzenbach, D.1
  • 16
    • 38049040486 scopus 로고    scopus 로고
    • Joint Commission on Powder Diffraction Standards-International Centre for Diffraction Data, Powder Diffraction File () (URL www.icdd.com).
    • Joint Commission on Powder Diffraction Standards-International Centre for Diffraction Data, Powder Diffraction File (2003) (URL www.icdd.com).
    • (2003)
  • 17
    • 0014831988 scopus 로고
    • JAPIAU 0021-8979 10.1063/1.1659509.
    • R. C. Neville and C. A. Mead, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1659509 41, 3795 (1970).
    • (1970) J. Appl. Phys. , vol.41 , pp. 3795
    • Neville, R.C.1    Mead, C.A.2
  • 20
    • 0032024293 scopus 로고    scopus 로고
    • JESOAN 0013-4651 10.1149/1.1838359.
    • S. Peulon and D. Lincot, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.1838359 145, 864 (1998).
    • (1998) J. Electrochem. Soc. , vol.145 , pp. 864
    • Peulon, S.1    Lincot, D.2
  • 22
    • 38049012532 scopus 로고    scopus 로고
    • An Introduction to Semiconductor Devices (McGraw-Hill, Boston).
    • D. Neamen, An Introduction to Semiconductor Devices (McGraw-Hill, Boston, 2006).
    • (2006)
    • Neamen, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.