4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag Ox /indium tin oxide anode modification

Applied Physics Letters

Volumn 92, Issue 1, 2008, Pages

  Yoon, Woo Jun ^a   Berger, Paul R ^a  

^a Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DERIVATIVES; FULLERENES; HETEROJUNCTIONS; PHOTOVOLTAIC EFFECTS; PLASMA APPLICATIONS; SHORT CIRCUIT CURRENTS; SPECTRUM ANALYSIS;

BULK HETEROJUNCTIONS; CHARGE COLLECTION EFFICIENCY; PHOTOVOLTAIC DEVICES; POLYMER HOLE TRANSPORTING LAYERS;

PHOTOELECTRIC DEVICES;

EID: 38049030530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2830619     Document Type: Article

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