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Volumn 33, Issue 2, 2007, Pages 309-313

Effect of particle size on oxidation of silicon carbide powders

Author keywords

Activation energy; Oxidation kinetics; Particle size; SiC powders

Indexed keywords

ACTIVATION ENERGY; OXIDATION; PARTICLE SIZE ANALYSIS; POWDERS; RATE CONSTANTS; THERMOGRAVIMETRIC ANALYSIS;

EID: 37849185381     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2005.09.014     Document Type: Article
Times cited : (100)

References (19)
  • 1
    • 0030283432 scopus 로고    scopus 로고
    • Passive-oxidation kinetics of high-purity silicon carbide from 800 to -1100 °C
    • Ramberg C.E., Cruciani G., Spear K.E., et al. Passive-oxidation kinetics of high-purity silicon carbide from 800 to -1100 °C. J. Am. Ceram. Soc. 79 3 (1996) 703-736
    • (1996) J. Am. Ceram. Soc. , vol.79 , Issue.3 , pp. 703-736
    • Ramberg, C.E.1    Cruciani, G.2    Spear, K.E.3
  • 2
    • 1642621158 scopus 로고
    • General relationship for the thermal oxidation of silicon
    • Deal B.E., and Grove A.S. General relationship for the thermal oxidation of silicon. J. Appl. Phys. 36 12 (1965) 3770-3778
    • (1965) J. Appl. Phys. , vol.36 , Issue.12 , pp. 3770-3778
    • Deal, B.E.1    Grove, A.S.2
  • 3
    • 0028403925 scopus 로고
    • Oxidation kinetics of chemically vapor-deposited silicon carbide in wet oxygen
    • Opila E.J. Oxidation kinetics of chemically vapor-deposited silicon carbide in wet oxygen. J. Am. Ceram. Soc. 77 3 (1994) 730-736
    • (1994) J. Am. Ceram. Soc. , vol.77 , Issue.3 , pp. 730-736
    • Opila, E.J.1
  • 4
    • 33947476628 scopus 로고
    • Oxidation of silicon carbide in the temperature range 1200-1500 °C
    • Adamsky R.F. Oxidation of silicon carbide in the temperature range 1200-1500 °C. J. Phys. Chem. 63 (1959) 305-307
    • (1959) J. Phys. Chem. , vol.63 , pp. 305-307
    • Adamsky, R.F.1
  • 5
    • 84987344259 scopus 로고
    • Oxidation kinetics of silicon carbide crystals and ceramics -1: In dry oxygen
    • Costello J.A., and Tressler R.E. Oxidation kinetics of silicon carbide crystals and ceramics -1: In dry oxygen. J. Am. Ceram. Soc. 69 (1986) 674-681
    • (1986) J. Am. Ceram. Soc. , vol.69 , pp. 674-681
    • Costello, J.A.1    Tressler, R.E.2
  • 6
    • 0033700818 scopus 로고    scopus 로고
    • Oxidation of SiC powders in SiC/alumina/zirconia compacts
    • Lin Y.J., and Chen L.J. Oxidation of SiC powders in SiC/alumina/zirconia compacts. Ceram. Int. 26 (2000) 593-598
    • (2000) Ceram. Int. , vol.26 , pp. 593-598
    • Lin, Y.J.1    Chen, L.J.2
  • 7
    • 0030718703 scopus 로고    scopus 로고
    • Oxidation of polycrystalline α-silicon carbide ceramic
    • Liu D.M. Oxidation of polycrystalline α-silicon carbide ceramic. Ceram. Int. 23 (1997) 425-436
    • (1997) Ceram. Int. , vol.23 , pp. 425-436
    • Liu, D.M.1
  • 8
    • 0030105905 scopus 로고    scopus 로고
    • Oxidation behavior of mullite-coated SiC and SiC/SiC composites under thermal cycling between room temperature and 1200-1400 °C
    • Lee K.N., and Miller R.A. Oxidation behavior of mullite-coated SiC and SiC/SiC composites under thermal cycling between room temperature and 1200-1400 °C. J. Am. Ceram. Soc. 79 3 (1996) 620-626
    • (1996) J. Am. Ceram. Soc. , vol.79 , Issue.3 , pp. 620-626
    • Lee, K.N.1    Miller, R.A.2
  • 9
    • 0029341123 scopus 로고
    • Effect of carbon and boron on the high temperature oxidation of silicon carbide
    • Fergus J.W., and Worrell W.L. Effect of carbon and boron on the high temperature oxidation of silicon carbide. J. Am. Ceram. Soc. 78 7 (1995) 1961-1964
    • (1995) J. Am. Ceram. Soc. , vol.78 , Issue.7 , pp. 1961-1964
    • Fergus, J.W.1    Worrell, W.L.2
  • 10
    • 0025398687 scopus 로고
    • Oxidation of single-crystal silicon carbide. Part I. Experimental studies
    • Zheng Z., Tressler R.E., and Spear K.E. Oxidation of single-crystal silicon carbide. Part I. Experimental studies. J. Electrochem. Soc. 137 3 (1990) 854-858
    • (1990) J. Electrochem. Soc. , vol.137 , Issue.3 , pp. 854-858
    • Zheng, Z.1    Tressler, R.E.2    Spear, K.E.3
  • 11
    • 0026819828 scopus 로고
    • Surface oxidation of silicon carbide. Quantitative measurement and Rh effect
    • Kizling M.B., Gallas J.P., Binet C., et al. Surface oxidation of silicon carbide. Quantitative measurement and Rh effect. Mater. Chem. Phys. 30 4 (1992) 273-277
    • (1992) Mater. Chem. Phys. , vol.30 , Issue.4 , pp. 273-277
    • Kizling, M.B.1    Gallas, J.P.2    Binet, C.3
  • 12
    • 0142028106 scopus 로고    scopus 로고
    • Surface oxidation kinetics of SiC powders in wet and dry air studied by X-ray photoelectron spectroscopy and bremsstrahlung-excited Auger electron spectroscopy
    • Wittberg T.N., Wang P.S., and Hsu S.M. Surface oxidation kinetics of SiC powders in wet and dry air studied by X-ray photoelectron spectroscopy and bremsstrahlung-excited Auger electron spectroscopy. Surf. Interface Anal. 35 (2003) 773-778
    • (2003) Surf. Interface Anal. , vol.35 , pp. 773-778
    • Wittberg, T.N.1    Wang, P.S.2    Hsu, S.M.3
  • 13
    • 0026849137 scopus 로고
    • Effect of sodium contamination on the oxidation of single crystal silicon carbide
    • Zheng Z., Tressler R.E., and Spear K.E. Effect of sodium contamination on the oxidation of single crystal silicon carbide. Corros. Sci. 33 4 (1992) 545-556
    • (1992) Corros. Sci. , vol.33 , Issue.4 , pp. 545-556
    • Zheng, Z.1    Tressler, R.E.2    Spear, K.E.3
  • 16
    • 0028464424 scopus 로고
    • Oxidation of ultrafine (Si-) SiC powder
    • Vaben R., and Stover D. Oxidation of ultrafine (Si-) SiC powder. J. Mater. Sci. 29 (1994) 3791-3796
    • (1994) J. Mater. Sci. , vol.29 , pp. 3791-3796
    • Vaben, R.1    Stover, D.2
  • 17
    • 33845920656 scopus 로고    scopus 로고
    • Oxidation behavior of sub-micrometer silicon carbide powder (in Chinese)
    • Li X.B., Zhou Q.S., Liu Y.X., et al. Oxidation behavior of sub-micrometer silicon carbide powder (in Chinese). Chinese J. Nonferrous Metals 10 4 (2000) 559-563
    • (2000) Chinese J. Nonferrous Metals , vol.10 , Issue.4 , pp. 559-563
    • Li, X.B.1    Zhou, Q.S.2    Liu, Y.X.3
  • 18
    • 0028544392 scopus 로고
    • Reaction bonding and mechanical-properties of mullite/silicon carbide composites
    • Wu S., and Claussen N. Reaction bonding and mechanical-properties of mullite/silicon carbide composites. J. Am. Ceram. Soc. 77 11 (1994) 2898-2904
    • (1994) J. Am. Ceram. Soc. , vol.77 , Issue.11 , pp. 2898-2904
    • Wu, S.1    Claussen, N.2
  • 19
    • 0001652254 scopus 로고
    • Permeation of gaseous oxygen through vitreous silica
    • Norton F.J. Permeation of gaseous oxygen through vitreous silica. Nature 191 (1961) 4789
    • (1961) Nature , vol.191 , pp. 4789
    • Norton, F.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.