Phonons in SiC from INS, IXS, and Ab-initio calculations

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 689-694

  Strauch, D ^a   Dorner, B ^b   Ivanov, A ^b   Krisch, M ^c   Serrano, J ^c   Bosak, A ^c   Choyke, W J ^d   Stojetz, B ^a   Malorny, M ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b INSTITUT LAUE LANGEVIN   (France)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^d UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

3C SiC; 4H SiC; Ab initio calculation; Inelastic neutron scattering; Inelastic X ray scattering; Phonon dispersion; Scattering intensity

Indexed keywords

DENSITY FUNCTIONAL THEORY; INELASTIC NEUTRON SCATTERING; PERTURBATION TECHNIQUES; SILICON CARBIDE;

PHONON DISPERSION; SCATTERING INTENSITY; X-RAY SCATTERING;

PHONONS;

EID: 37849020159     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.689     Document Type: Conference Paper

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