Thermal lens technique for the determination of SiC thermo-optical properties

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 703-706

  Anjos, V ^a   Bell, M J V ^a   De Vasconcelos, E A ^b   Da Silva Jr , E F ^b   Andrade, A A ^c   Franco, R W A ^c   Castro, M P P ^c   Esquef, I A ^c   Faria Jr , R T ^c  

^a FEDERAL UNIVERSITY OF JUIZ DE FORA   (Brazil)

^b FEDERAL UNIVERSITY OF PERNAMBUCO   (Brazil)

^c UNIVERSIDADE ESTADUAL DO NORTE FLUMINENSE DARCY RIBEIRO   (Brazil)

Author keywords

Thermal conductivity; Thermal diffusivity; Thermal lens

Indexed keywords

PHOTOACOUSTIC EFFECT; POLYCRYSTALLINE MATERIALS; SPECIFIC HEAT; SPECTROMETRY; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

DIVERGENT LENS; PHOTOTHERMAL TECHNIQUES; THERMAL LENS TECHNIQUE;

SILICON CARBIDE;

EID: 37849015153     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.703     Document Type: Conference Paper

References (17)

1. Y. Kuwano, M. Ohnishi, S. Tsuda, and Y. Hamkawa: J. Appl. Phys. 53 (1982), p. 5273.
2. D. Kruangam, T. Endo, W. Guang-Pu, S. Nonomura, H. Okamoto, and Y. Hamkawa: J. NonCryst. Solids 77-78 (1985), p. 1429.
3. F. Palma, in Technology and Applications of Amorphous Silicon, R. A. Street (Ed.), Springer, Berlin, 2000, p. 306-341.
4. T. Lai, L. Rozario, J. H. Chern, L. P. Sadwick, R. J. Hwu, D. King, V. E. Chelnokov, and P. A. Ivanov: Proceedings of the 3rd International High Temperature Electronic Conference (HiTEC), Vol. 1, Albuquerque, New Mexico, June 1996, p. 183.
5. M. B. Bhatanagar and B. J. Boliga: IEEE Trans. Electron Devices 40 (1993), p. 645.
6. P. G. Neudeck: J. Electron. Mater. 24 (1995), p. 283.
7. Silicon Carbide and Related Materials (1995), Institute of Physics Conference Series No. 142, IOP, Bristol, U.K., 1996.
8. F. G. Della Corte, M. E. Montefusco, L. Moretti, I. Rendina, and A. Rubino: Appl. Phys. Lett. 79 (2001), p. 168.
9. Y. Waseda and H. Ohta: Solid State Ionics 22 (1987), p. 263.
10. J. A. Balderas-Lopez, A. Mandelis, and J. A. Garcia: Rev. Sci. Instrum. 71 (2000), p. 2933
11. S. Pittois, M. Chirtoc, C. Glorieux, W. Van den Bril, and J. Thoen: Anal. Sci. 17, s110 (2001).
12. N. G. C. Astrath, J. H. Rohling, A. N. Medina, A. C. Bento, M. L. Baesso, C. Jacinto, T. Catunda, S. M. Lima, F. G. Gandra, M. J. V. Bell, and V. Anjos: Phys. Rev. B 71 (2005), p. 214202.
13. J. H. Rohling, A. M. F. Caldeira, J. R. D. Pereira, A. N. Medina, A. C. Bento, M. L. Baesso, L. C. M. Miranda, and A. F. Rubira: J. Appl. Phys. 89 (2001), p. 2220.
14. M. L. Baesso, J. Shen, and R. D. Snook: J. Appl. Phys. 75 (1994), p. 3733.
15. H. Vargas and L. C. M. Miranda: Phys. Rep. 161 (1998), p. 43.
16. D. Amond, and P. Patel in Photoacoustic and Photothermal Science and Techniques (Chapman and Hall, London, 1996).
17. Yu Goldberg., M. E. Levinshtein, and S. L. Rumyantsev in Properties of Advanced Semiconductor Materials GaN, AlN, SiC, BN, SiC, SiGe . Eds. M. E. Levinshtein, S. L. Rumyantsev, M. S. Shur, John Wiley & Sons, Inc., New York, 2001, p. 93-148.