First demonstration of 2.1 kW output power at 425 MHz using 4H-SiC RF power BJTs

Materials Science Forum

Volumn 527-529, Issue PART 2, 2006, Pages 1413-1416

  Agarwal, Anant ^a   Husna, Fatima ^a   Haley, Jeremy ^b   Bartlow, Howard ^c   McCalpin, Bill ^b   Krishnaswami, Sumi ^a   Capell, Craig ^a   Ryu, Sei Hyung ^a   Palmour, John W ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b dBm Engineering Inc ^*  (United States)

^c HdB Engineering Inc   (United States)

Author keywords

BJT; PAE; Power gain; RF

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; POWER ELECTRONICS; SILICON CARBIDE;

COLLECTOR EFFICIENCY; DUTY CYCLE; OUTPUT POWER; POWER GAIN;

BIPOLAR TRANSISTORS;

EID: 37849002851     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.1413     Document Type: Conference Paper

References (3)

1. Anant Agarwal et al.: Digest of the 2002 IEEE Lester Eastman Conference on High Power Devices, University of Delaware, (2002), p. 10.
2. Stephen E. Saddow and Anant Agarwal, Advances in SiC Processing and Applications, 1 st ed., Artech House, Inc., (2004), p. 177.
3. S-H. Ryu et al.: IEEE Electron Device Letters, Vol. 22, (2001), p. 124.