Quantum dots based on spin properties of semiconductor heterostructures

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 15, 2004, Pages

  Valín Rodríguez, Manuel ^a   Puente, Antonio ^a   Serra, Llorenç ^a,b  

^a UNIVERSITAT DE LES ILLES BALEARS   (Spain)

^b INSTITUTO MEDITERRÁNEO DE ESTUDIOS AVANZADOS   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CALCULATION; MOLECULAR MODEL; MOLECULAR WEIGHT; PARTICLE SIZE; QUANTUM MECHANICS; SEMICONDUCTOR; STRUCTURE ANALYSIS;

EID: 37649027555     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.153308     Document Type: Article

References (17)

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3. In cases of a very high degree of nuclear polarization the pure spin-dependent confinement induced by the hyperfine inhomogeneous magnetic field also becomes important, as discussed in V. Fleurov, V.A. Ivanov, F.M. Peeters, and I.D. Vagner, Physica E (Amsterdam) 14, 361 (2002); Yu.V. Pershin, Phys. Rev. B 69, 085314 (2004).
4. In cases of a very high degree of nuclear polarization the pure spin-dependent confinement induced by the hyperfine inhomogeneous magnetic field also becomes important, as discussed in V. Fleurov, V.A. Ivanov, F.M. Peeters, and I.D. Vagner, Physica E (Amsterdam) 14, 361 (2002); Yu.V. Pershin, Phys. Rev. B 69, 085314 (2004).
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