Energy level structure and electron relaxation times in InAs Inx Ga1-x As quantum dot-in-a-well structures

Applied Physics Letters

Volumn 91, Issue 25, 2007, Pages

  Aivaliotis, P ^a   Menzel, S ^a   Zibik, E A ^a   Cockburn, J W ^a   Wilson, L R ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; EXCITED STATES; PHOTODETECTORS; RELAXATION TIME; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; VALENCE BANDS;

ELECTRON RELAXATION TIMES; ENERGY LEVEL STRUCTURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 37549056929     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2816128     Document Type: Article

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