Effects of SiNx passivation and gate metal roughness on the performance of on-plastic a-Si:H TFTs

Electrochemical and Solid-State Letters

Volumn 11, Issue 2, 2008, Pages

  Chen, Jian Z ^a,b,d   Cherenack, K ^a   Tsay, C ^a   Cheng, I Chun ^a,c   Wagner, Sigurd ^a,d  

^a Princeton University   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; METALLIC FILMS; PASSIVATION; SURFACE ROUGHNESS;

FIELD-EFFECT MOBILITY; GATE METALS; PASSIVATED KAPTON; SUBTHRESHOLD SLOPE;

THIN FILM TRANSISTORS;

EID: 37549030077     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2812443     Document Type: Article

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