Photogalvanic effects for interband transition in p-Si0.5 Ge0.5 Si multiple quantum wells

Applied Physics Letters

Volumn 91, Issue 25, 2007, Pages

  Wei, C M ^a   Cho, K S ^a   Chen, Y F ^a   Peng, Y H ^a   Chiu, C W ^a   Kuan, C H ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION ENERGY; MAGNETOELECTRONICS; PHASE TRANSITIONS; PHOTOCURRENTS; RADIATION; SILICON COMPOUNDS;

CIRCULAR PHOTOGALVANIC EFFECT (CPGE); EXCITATION INTENSITIES; INTERBAND TRANSITION; SPIN GENERATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 37549018064     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2825572     Document Type: Article

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