Evolution of atomic-scale roughening on Si(001)-(2×1) surfaces resulting from high temperature oxidation

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 13, Issue 3, 1995, Pages 772-776

  Seiple, J V ^a   Pelz, J P ^a  

^a OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; CRITICAL LINES; DOMAIN FORMATION; ELEVATED TEMPERATURE; FUNCTION OF PRESSURE; GROWTH FEATURE; HIGH TEMPERATURE OXIDATION; HIGHER TEMPERATURES; LANGMUIR; LOW DOSE; ORDERS OF MAGNITUDE; OXIDATION CONDITIONS; OXIDE CLUSTERS; PINNING CENTER; SI(0 0 1); STICKING COEFFICIENTS; SURFACE ETCHING;

ATOMS; ETCHING; OXIDATION; SCANNING TUNNELING MICROSCOPY; SILICON; SILICON COMPOUNDS;

SURFACE MORPHOLOGY;

EID: 37549016644     PISSN: 07342101     EISSN: 15208559     Source Type: Journal    
DOI: 10.1116/1.579825     Document Type: Article

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