Temperature dependence of the energy bandgap of HgInTe

Infrared Physics and Technology

Volumn 51, Issue 3, 2008, Pages 256-258

  Zhang, X L ^a,b   Sun, W G ^a,b   Kosyachenko, L A ^c   Zhang, L ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b Luoyang Optoelectronic Institute   (China)

^c CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; BAND STRUCTURE; GRAPH THEORY; INFRARED TRANSMISSION; TEMPERATURE MEASUREMENT;

ABSORPTION COEFFICIENTS; ABSORPTION EQUATIONS;

INDIUM ALLOYS;

EID: 37449022188     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2007.05.003     Document Type: Article

References (8)

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4. 6 compound. Ukr. Phys. J. 30 (1985) 304
5. Chu J. Narrow gap semiconduction of physics (2005), Science Press (in Chinese)
6. 6 crystals doped with silicon. Semiconductors 37 2 (2003) 168
7. Pankov J.I. Optical Processes in Semiconductors (1996), Prentice-Hall Inc., New Jersey 1971, p. 456
8. Dereniak E.L., and Boreman G.D. Infrared Detectors and Systems (1996), John Wiley & Sons Inc., New York P298