Photovoltaic properties of n-(ZnS)X(CdTe)1-X/p-Si

Turkish Journal of Physics

Volumn 31, Issue 5, 2007, Pages 259-264

  Al Ani, S K J ^a,b   Ba Yashoot, A Kh ^b   Makadsi, M N ^a   Ai Sharbaty, A M ^c  

^a UNIVERSITY OF BAGHDAD   (Iraq)

^b HADHRAMOUT UNIVERSITY   (Yemen)

^c MUSTANSIRIYAH UNIVERSITY   (Iraq)

Author keywords

Efficiency; Hetrojunction solar cells; Ideality factor; n (ZnS)x(CdTe)1 x p Si; Photovoltaic properties; Thermal evaporation technique

Indexed keywords

CADMIUM COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; SILICON COMPOUNDS; SOLAR CELLS; TELLURIUM COMPOUNDS; ZINC SULFIDE;

ANNEALED CELLS; HETROJUNCTION SOLAR CELLS; IDEALITY FACTOR;

PHOTOVOLTAIC EFFECTS;

EID: 37449003441     PISSN: 13000101     EISSN: 13036122     Source Type: Journal    
DOI: None     Document Type: Article

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