SCOPUS 정보 검색 플랫폼

9
- 0012625908
- The molecular beam epitaxy growth of InGaAs on GaAs(100) studied by in situ scanning tunneling microscopy and reflection high-energy electron diffraction
- Such an oscillatory behavior of the InGaAs lattice parameter can also be seen in the Fig. 2 data of the following reference (but without comment of the authors):
- (1991) Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures , vol.9 , pp. 2189
- Snyder, C.W.¹ Barlett, D.² Orr, B.G.³ Bhattacharya, P.K.⁴ Singh, J.⁵

10
- 84927895663
- This is not surprising since a fractional monolayer cannot be considered as a continuous elastic medium.

11
- 84927895662
- It should be noted that we cannot be sure that we measure the actual mean a|| parameter variation. Since the in-plane lattice parameter varies from the center (where it should be equal to that of GaAs) to edges of 2D islands, some asymmetric broadening of the streaks, which may affect the determination of their position, should occur. From sample to sample we observe a difference in a|| for half and complete monolayer coverage ranging from 0.3% to 0.5%. This scattering can reflect the lack of precision we have in determining the actual value of the mean a||. In fact it is more probably associated with the fluctuation of the mean island size. Indeed we have checked that broadening effects are very limited.

14
- 84927895661
- This seems justified (to a first approximation) at least for the very first monolayers of InGaAs when the growth regime is still 2D or quasi-2D (our model is proposed to explain the lattice relaxation behavior in this regime). In this case the strain energy is homogeneously distributed over the entire substrate surface. However, when highly 3D islands are formed (i.e., beyond 6 ML), substrate deformation can no longer be neglected (see, for example, Refs. [1] and [2]).

16
- 0026413163
- (1991) J. Cryst. Growth , vol.111 , pp. 178
- McCoy, J.M.¹ Maksym, P.A.²

17
- 84927895660
- The As-As mean surface bond energy is taken as half of the dimer bond energy.

18
- 84927895659
- For the sake of simplicity, we consider that 2D islands are isotropic to evaluate Δ a||/ a||GaAs at the surface from the calculated 1D island a|| mean relaxation.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.