High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 587-590

  Schmidt, J ^a   Matsumoto, T ^a   Poluektov, O G ^a   Van Duijn Arnold, A ^a   Ikoma, T ^a   Baranov, P G ^b   Mokhov, E N ^b  

^a LEIDEN UNIVERSITY   (Netherlands)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

Acceptors; Boron; ENDOR; EPR

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONIC STRUCTURE; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SINGLE CRYSTALS;

ELECTRON ACCEPTORS; ELECTRON NUCLEAR DOUBLE RESONANCE (ENDOR) SPECTROSCOPY;

SILICON CARBIDE;

EID: 3743104890     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.587     Document Type: Article

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