Intrinsic modulation doping in InP-based heterostructures

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 805-812

  Chen, W M ^a   Buyanova, I A ^a   Bi, W G ^b   Tu, C W ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Antisite; Doping; HEMTs; InGaAs; InP; Intrinsic; MBE; Off stoichiometric

Indexed keywords

CHARGE TRANSFER; CRYSTAL DEFECTS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY;

ANTISITES; ELECTRON MOBILITY; INTRINSIC MODULATION DOPING METHOD;

HETEROJUNCTIONS;

EID: 3743097202     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.805     Document Type: Article

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