Electronic and atomic structure of the C-terminated 6H-SiC surface

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 331-334

  Hollering, M ^a   Mattern, B ^a   Maier, F ^a   Ley, L ^a   Stampfl, A P J ^b   Xue, J ^b   Riley, J D ^b   Leckey, R C G ^b  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LA TROBE UNIVERSITY   (Australia)

Author keywords

Angle Resolved Photoelectron Spectroscopy; C Terminated 6H SiC; Surface States

Indexed keywords

BINDING ENERGY; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; ENERGY GAP; LOW ENERGY ELECTRON DIFFRACTION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED PHOTOELECTRON SPECTROSCOPY (ARPES); SURFACE STATES; VALENCE BAND MAXIMUM (VBM);

SILICON CARBIDE;

EID: 3743093735     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.331     Document Type: Article

References (7)

1. U. Starke, Phys.Stat.Sol.(b) 202 (1997) preprint
2. R.C.G. Leckey and J.D. Riley, Appl.Surf.Sci. 22/23 (1985) 196
3. M. Hollering, A. Ziegler, R. Graupner, B. Mattern, and L. Ley, A.P.J. Stampfl, J.D. Riley, R.C.G. Leckey, Diam.Rel.Mat., accepted
4. M. Sabisch, P. Krüger, and J. Pollmann, Phys.Rev. B 55 (1997) 10561
5. R. Kaplan, Surf.Sci. 215 (1989) 111
6. M.A. Kulakov, P. Heuell, V.F. Tsvetkov and B. Bullemer, Surf.Sci. 315 (1994) 248
7. H. Hoster, M.A. Kulakov, B. Bullemer, Surf.Sci. 382 (1997) L658