Comparison between CVD and thermal oxide dielectric integrity

IEEE Electron Device Letters

Volumn 7, Issue 9, 1986, Pages 506-509

  Lee, J ^a   Chen, I ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3743093560     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26454     Document Type: Article

References (7)

1. K. Yamabe, K. Taniguchi, and Y. Matsushita, “Thickness dependence of dielectric breakdown failure of thermal SiO2 films,” in Proc. 1983 Int. Rel. Phys. Symp., p. 184
2. K. Yamabe and K. Taniguchi, “Time-dependent dielectric breakdown of thin thermally grown SiO 2 films,” IEEE Trans. Electron Devices, vol. ED-32. no. 2, p. 423, Feb. 1985.
3. H. Abe, F. Kiyosumi, K. Yoshioka, and M. Ino, “Analysis of defects in thin SiO 2 thermally grown on Si substrate,” in IEDM Tech. Dig., Dec. 1985, 397.
4. D. L. Crook, “Method of determining reliability screens for time dependent dielectric breakdown,” in Proc. 1979 Int. Rel. Phys. Symp., p. 1.
5. M. S. Liang and C. Hu, “Electron trapping in very thin thermal silicon dioxides,” in IEDM Tech. Dig., Dec. 1981, p. 396.
6. T. H.Di Stefano and M. Shatzkes, “Impact ionization model for dielectric instability and breakdown,” Appl. Phys. Lett., vol. 25, no. 12, p. 685, Dec. 1974.
7. I. C. Chen, S. Holland, and C. Hu, “Hole trapping and breakdown,” in thin SiO2 IEEE Electron Device Lett., vol. EDL-7, no. 3, p. 164, Mar. 1986.