Boron four particle acceptor bound exciton complex in 4H SiC

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 461-464

  Sridhara, S G ^a   Nizhner, D G ^a   Devaty, R P ^a   Choyke, W J ^a   Troffer, T ^b   Pensl, G ^b   Larkin, D J ^c   Kong, H S ^d  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c NASA GLENN RESEARCH CENTER   (United States)

^d Arkansas Power Electronics International Inc   (United States)

Author keywords

Boron; Bound Exciton; Four Particle Complex

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EXCITONS; PHOTOLUMINESCENCE; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

FOUR PARTICLE BOUND EXCITON COMPLEX;

SILICON CARBIDE;

EID: 3743082761     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.461     Document Type: Article

References (8)

1. S.G. Sridhara, L.L. Clemen, R.P. Devaty, W.J. Choyke, D.J. Larkin, H.S. Kong, T. Troffer and G.Pensl, to be published.
2. G. Wellenhofer and U. Rössler, Phys. Stat. Sol. (b) 202 (1997), p. 107.
3. D.J. Larkin, P.G. Neudeck, J.A. Powell and L.G. Matus, Appl. Phys. Lett. 65 (1994), p. 1659.
4. Lyle Patrick, W.J. Choyke and D.R. Hamilton, Phys. Rev. 137 (1965), p. A1515.
5. A.G. Zubatov, I.M. Zaritskii, S.N. Lukin, E.N. Mokhov and V.G. Stepanov, Sov. Phys. Solid State 27 (1985), p. 197 [Fiz. Tverd. Tela 26 (1985), p. 322].
6. A.G. Zubatov, I.M. Zaritskii, S.N. Lukin, E.N. Mokhov and V.G. Stepanov, Sov. Phys. Solid State 27 (1985), p. 197 [Fiz. Tverd. Tela 26 (1985), p. 322].
7. T. Matsumoto, O.G. Poluektov, J. Schmidt, E.N. Mokhov and P.G. Baranov, Phys. Rev. B 55 (1997), p. 2219.
8. T.L. Petrenko, V.V. Teslenko, A.A. Bugai, V.D. Khavryutchenko and A.A. Klimov, Semicond Sci. Technol. 11 (1996), p. 1276.