Growth and characterization of SiC films on large-area Si wafers by APCVD - Temperature dependence

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 179-182

  Wu, C H ^a   Fleischman, A J ^a   Zorman, C A ^a   Mehregany, M ^a  

^a Case Western Reserve University   (United States)

Author keywords

APCVD; TEM; Temperature Dependence; X Ray Diffraction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; FILM GROWTH; HYDROGEN; PROPANE; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON CARBIDE; THERMAL EFFECTS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD);

SEMICONDUCTING FILMS;

EID: 3743079403     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.179     Document Type: Article

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