A first principles study of interstitial Si in diamond

Materials Science Forum

Volumn 258-263, Issue PART 2, 1997, Pages 781-786

  Goss, J P ^a   Jones, R ^b   Breuer, S J ^c   Briddon, P R ^d   Oberg S ^e  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b UNIVERSITY OF EXETER   (United Kingdom)

^c UNIVERSITY OF EDINBURGH   (United Kingdom)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

^e LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Ab initio calculations; Diamond; Interstitial; Silicon

Indexed keywords

BINDING ENERGY; COMPUTER AIDED ANALYSIS; CRYSTAL IMPURITIES; INDUSTRIAL DIAMONDS; SEMICONDUCTING SILICON;

INTERSTITIAL SILICON; SOFTWARE PACKAGE AIMPRO;

SEMICONDUCTING DIAMONDS;

EID: 3743077267     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.781     Document Type: Article

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