Identification of grain-boundary trap properties using three-level charge-pumping technique in polysilicon thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1394-1397

  Kim, Kee Jong ^a   Kim, Ohyun ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Grain boundary; Poly Si TFT; Three level charge pumping (3CP) technique; Time constant window; Trap density

Indexed keywords

EID: 3743071584     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1394     Document Type: Article

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