The I centre : A hydrogen related defect in silicon

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 289-294

  Gower, Joanne ^a   Davies, Gordon ^a   Lightowlers, E C ^a   Safonov, A N ^a  

^a KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

Hydrogen; Isoelectronic centre; Luminescence; Silicon

Indexed keywords

ANNEALING; CARBON; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; ELECTROLUMINESCENCE; ELECTRONS; HYDROGEN; IRRADIATION; PHASE TRANSITIONS; PHONONS;

CZOCHRALSKI SILICON; ZEEMAN PERTURBATIONS; ZERO PHONON TRANSITIONS;

SEMICONDUCTING SILICON;

EID: 3743049065     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.289     Document Type: Article

References (8)

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2. A.N. Safonov et al, Phys Rev Lett. P4812, Vol 77, No 23 (1996)
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5. P. Leary et al, these proceedings.
6. J.E. Gower et al, Early stages of oxygen precipitation in Silicon, P463, (1996)
7. A.A. Kaplyanskii, Opt. Spectrosc. P329, 16 (1964)
8. A.N. Safonov, E.C. Lightowlers & Gordon Davies, Mater. Sci. For. P909, Vol 196-201 (1995)