Enhancement of light extraction from microstructured GaN-based light emitting diodes by technique of nanoimprint

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 28, Issue SUPPL., 2007, Pages 464-466

  Bao, Kui ^a   Zhang, Bei ^a   Dai, Tao ^a   Kang, Xiangning ^a   Chen, Zhizhong ^a   Wang, Zhimin ^a   Chen, Yong ^a,b  

^a PEKING UNIVERSITY   (China)

^b UNIV PARIS SUD   (France)

Author keywords

Extraction efficiency; GaN based light emitting diode; Microstructure; Nanoimprint technique

Indexed keywords

GALLIUM NITRIDE; MICROSTRUCTURE; TWO DIMENSIONAL;

EXTRACTION EFFICIENCY; GALLIUM NITRIDE BASED LIGHT EMITTING DIODE (LED); NANOIMPRINT TECHNIQUE;

LIGHT EMITTING DIODES;

EID: 37349020618     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. Wierer J J, Steigerwald D A, Krames M R, et al. High-power AlGaInN flip-chip light-emitting diodes. Appl Phys Lett, 2001, 78: 03379
2. Khizar M, Fan Z Y, Kim K H, et al. Nitride deep-ultraviolet light-emitting diodes with microlens array. Appl Phys Lett, 2005, 86: 173504
3. Chou S Y, Krauss P R, Renstrom J. Imprint of sub-25 nm vias and trenches in polymers. Appl Phys Lett, 1995, 67: 3114
4. Bao Kui, Zhang Bei, Wang Zhimin, et al. Improvement of surface light extraction from flip-chip GaN-based LED by embossing of thermosetting polymers. Phys Status Solidi C, 2007, 4(1): 33