Size effect on I-V characteristics of low dimensional metal-semiconductor heterojunctions

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 40, Issue 3, 2008, Pages 591-593

  Singh, Ranjeet ^a   Kumar, Rajesh ^b   Chakarvarti, S K ^c  

^a Government Post Graduate College   (India)

^b Haryana College of Technology & Management Kaithal   (India)

^c NATIONAL INSTITUTE OF TECHNOLOGY   (India)

Author keywords

Cu Se heterostructures; Electrodeposition; I V characteristics; Resonant tunneling diodes

Indexed keywords

COPPER; ELECTRODEPOSITION; RESONANT TUNNELING; SCANNING ELECTRON MICROSCOPY; SELENIUM; SEMICONDUCTOR MATERIALS;

ANODIC ALUMINA MEMBRANES (AAM); RESONANT TUNNELING DIODES; RESONATING TUNNELING DIODES (RTDS);

HETEROJUNCTIONS;

EID: 37349012174     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2007.08.136     Document Type: Article

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