Electrical and optical anisotropy of layered In2Se3 epitaxial films

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 183-186

  Ohtsuka, T ^a   Okamoto, T ^a   Yamada, A ^a   Konagai, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL FILMS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; OPTICAL ANISOTROPY; SELENIUM COMPOUNDS; SEMICONDUCTING GALLIUM;

ABSORPTION CO-EFFICIENT; ELECTRICAL AND OPTICAL ANISOTROPY; GAAS SUBSTRATES; LAYERED STRUCTURES;

INDIUM COMPOUNDS;

EID: 37249071574     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711610     Document Type: Conference Paper

References (13)

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