Transport properties of molecularly stabilized porous silicon schottky junctions

New Journal of Physics

Volumn 9, Issue , 2007, Pages

  Rabinal, M K ^a   Mulimani, B G ^a,b  

^a KARNATAK UNIVERSITY   (India)

^b GULBARGA UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE TRANSFER; MOLECULAR DYNAMICS; PASSIVATION; POROUS SILICON;

ATMOSPHERIC CONTAMINATION; CURRENT-VOLTAGE CURVES; POROUS SILICON SCHOTTKY JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 37249029957     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/9/12/440     Document Type: Article

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