Fabrication of 22 nm half-pitch silicon lines by single-exposure self-aligned spatial-frequency doubling

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2224-2227

  Raub, Alex K ^a   Li, Dong ^a   Frauenglass, Andrew ^a   Brueck, S R J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY DOUBLING; MASK OPENINGS; WAVELENGTH SOURCE;

ANISOTROPIC ETCHING; LINEAR SYSTEMS; MICROFABRICATION; PASSIVATION; SILICON; WAVELENGTH;

ELECTRIC LINES;

EID: 37149038005     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2801889     Document Type: Article

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