Dissolution characteristics and reaction kinetics of molecular resists for extreme-ultraviolet lithography

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2486-2489

  Toriumi, Minoru ^a,c   Santillan, Julius ^a   Itani, Toshiro ^a   Kozawa, Takahiro ^b   Tagawa, Seiichi ^b  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXTREME ULTRAVIOLET LITHOGRAPHY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; QUANTUM YIELD; QUARTZ CRYSTAL MICROBALANCES; RATE CONSTANTS; REACTION KINETICS;

MOLECULAR RESIST; POLYMER RESISTS; POLYPHENOL;

PHOTORESISTS;

EID: 37149015135     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2787850     Document Type: Article

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