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Journal of Applied Physics

Volumn 48, Issue 11, 1977, Pages 4831-4833

Breakdown field in vapor-grown silicon carbide p-n junctions

(2) Muench, W V a Pfaffeneder, I a

a LEIBNIZ UNIVERSITY HANNOVER (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36749107328 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.323509 Document Type: Article

Times cited : (92)

References (9)

1
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- 1973, edited by R. C. Marshall, J. W. Faust, and C. E. Ryan (University of South Carolina Press, Columbia,)
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- Keyes, R.W.¹

2
- 0003950343
- (Wiley, New York)
- (1969) Physics of Semiconductors , pp. 114-116
- Sze, S.M.¹

3
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- Glover, G.H.¹

4
- 0011077436
- (1969) J. Appl. Phys , vol.40 , pp. 2320
- van Opdorp, C.¹ Vrakking, J.²

5
- 0016900132
- (1976) Thin Solid Films , vol.31 , pp. 39
- Muench, W.v.¹ Pfaffeneder, I.²

6
- 0041942703
- (1969) Br. J. Appl. Phys , vol.2 , pp. 309
- Brander, R.W.¹ Sutton, R.P.²

7
- 0012953419
- (1964) IEEE Trans. Electron Devices , vol.ED‐11 , pp. 313
- Davies, R.L.¹ Gentry, F.E.²

8
- 0009667182
- (1966) Appl. Phys. Lett , vol.9 , pp. 242
- Crowell, C.R.¹ Sze, S.M.²

9
- 36849106474
- (1966) Appl. Phys. Lett , vol.8 , pp. 111
- Sze, S.M.¹ Gibbons, G.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.