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Applied Physics Letters

Volumn 33, Issue 7, 1978, Pages 665-667

Electron mobilities in modulation-doped semiconductor heterojunction superlattices

(4) Dingle, R a Stormer H L a Gossard, A C a Wiegmann, W a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36749106768 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.90457 Document Type: Article

Times cited : (1222)

References (20)

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7
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9
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- Sakaki, H.¹ Chang, L.L.² Ludeke, R.³ Chang, C.‐A.⁴ Sai‐Halasz, G.A.⁵ Esaki, L.⁶

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- Kasper, E.¹ Herzog, H.J.² Kibbel, H.³

11
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12
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14
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16
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- (unpublished)
- Lang, D.V.¹ Jaros, M.² Logan, R.A.³

17
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- Hall data from a bulk Si‐doped [formula omitted] layer indicates a deep level at [formula omitted] as well as what appears to be a temperature‐independent electron concentration of [formula omitted] at low temperatures.

18
- 84950864642
- Mobilities in MBE‐grown [formula omitted] are low. In particular, the sample mentioned in Ref. 15 has a maximum mobility of [formula omitted] at room temperature which falls to [formula omitted] at 4.2 K. In the superlattices, any carriers remaining in the [formula omitted] layer will make an insignificant contribution to the conductivity, especially at low temperatures.

19
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.