Fabrication and electrical properties of a Cu-tetracyanoquinodimethane nanowire array in a porous anodic alumina template

Nanotechnology

Volumn 19, Issue 1, 2008, Pages

  Shen, Haoting ^a   Zheng, Kaibo ^a   Li, Jinglei ^a   Sun, Dalin ^a   Chen, Guorong ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER-TETRACYANOQUINODIMETHANE (CUTCNQ); ELECTRICAL SWITCHING; MEMORY EFFECTS;

ALUMINA; DATA STORAGE EQUIPMENT; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY; SWITCHING;

NANOWIRES;

ALUMINUM OXIDE; COPPER COMPLEX; NANOWIRE; NITRILE; TETRACYANOQUINODIMETHANE; UNCLASSIFIED DRUG;

ARTICLE; ELECTRIC RESISTANCE; ELECTRODE; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; INFORMATION STORAGE; MOLECULAR ELECTRONICS; NANOARRAY; POROSITY; PRIORITY JOURNAL; VAPOR;

EID: 36749084786     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/01/015305     Document Type: Article

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