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Applied Physics Letters

Volumn 52, Issue 13, 1988, Pages 1103-1105

High-resolution capacitance measurement and potentiometry by force microscopy

(3) Martin, Yves a Abraham, David W a Wickramasinghe, H Kumar a

a IBM T J WATSON RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549104784 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.99224 Document Type: Article

Times cited : (643)

References (10)

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3
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- Martin, Y.¹ Rugar, D.² Wickramasinghe, H.K.³

5
- 0000723069
- edited by D. O. Thompson and D. E. Chimenti (Plenum, New York), Vo. 6B.
- (1987) Review of Progress in Quantitative Nondestructive Evaluation , pp. 1307
- McClelland, G.M.¹ Brlandsson, R.² Chiang, S.³

6
- 0003608733
- 2nd ed. (Freeman, San Francisco).
- (1970) Electromagnetic Fields and Waves , pp. 150
- Lorrain, P.¹ Corson, D.²

7
- 84953676418
- STM’87 Conference Proceedings
- (1988) J. Vac. Sci. Technol. A , vol.6 , pp. 271
- Albrecht, T.¹ Quate, C.²

8
- 0037867862
- (1985) J. Appl. Phys , vol.57 , pp. 1437
- Matey, J.R.¹ Blanc, J.²

9
- 0022667237
- (1986) Appl. Phys. Lett , vol.48 , pp. 514
- Muralt, P.¹ Pohl, D.²

10
- 84950794578
- Measurements were made on an npn power transistor, model 2N3439.

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.