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Volumn 59, Issue 5, 1986, Pages 1587-1595

Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 36549104227     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.336468     Document Type: Article
Times cited : (112)

References (25)
  • 12
    • 0004873491 scopus 로고
    • The absence of diffraction peaks provides only an upper limit of the volume fraction of the crystalline phase. For x‐ray diffraction, the lower limit of detection is approximately a volume fraction of the crystalline phase of 0.001. See, e.g., edited by A. C. Zettlemoyer (Dekker, New York)
    • (1969) Nucleation , pp. 489
    • Hammel, J.J.1
  • 17
    • 84952851938 scopus 로고
    • Talk presented to the National Research Council Conference on Electrical Insulation and Dielectric Phenomena at the National Bureau of Standards, Gaithersburg, MD
    • (1975)
    • Thomas, J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.