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Volumn 64, Issue 2, 1988, Pages 787-792

Switching kinetics of lead zirconate titanate submicron thin-film memories

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Indexed keywords


EID: 36549102771     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341925     Document Type: Article
Times cited : (442)

References (31)
  • 21
    • 0001047020 scopus 로고
    • This value compares poorly with that of 12 kV/cm at lower fields in ceramic [formula omitted] by
    • (1970) Jpn. J. Appl. Phys. , vol.9 , pp. 1236
    • Takahashi, M.1
  • 30
    • 84952851695 scopus 로고    scopus 로고
    • Unlike the case (Ref. 19) of DOBAMBC or TGS, it is not possible to approximate [formula omitted] over a wide range of fields E as [formula omitted] because the effective exponent n depends strongly upon temperature; i.e., the field dependence and temperature dependence are not separable. However, a temperature exponent can be obtained, as in Fig. 6, if field E is kept constant


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.